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10 wafers of 4" 4H-SiC, V-doped SI, 100 mm diameter, 4-degree off-axis, >1E5 ohm-cm2, double side polish, silicon face CMP, with epi on Si face: Epi 1: n-type, shall be greater than 1E18 cm-3 and less than 5e18 cm-3.

General Information

Document Type:SNOTE
Posted Date:Dec 13, 2018
Category: Nonmetallic Fabricated Materials
Set Aside:N/A

Contracting Office Address

NASA Shared Services Center (NSSC), Building 1111, Jerry Hlass Road Stennis Space Center MS 39529

Description

Synopsis: NOTE: THIS NOTICE WAS NOT POSTED TO FEDBIZOPPS ON THE DATE INDICATED IN THE NOTICE ITSELF (13-DEC-2018); HOWEVER, IT DID APPEAR IN THE FEDBIZOPPS FTP FEED ON THIS DATE. PLEASE CONTACT 877-472-3779 or fbo.support@gsa.gov REGARDING THIS ISSUE.

Original Point of Contact

POC GENEVIEVE M. RABOTEAU, ADMINISTRATIVE ASSISTANT III, - Karen Artis, Contracting Officer

Place of Performance

Address:
Glenn Research Center Cleveland, OH
44135, US
Link: Link To Document
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